Power LDMOS transistor

10 W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Designed for broadband operation
  • Excellent thermal stability
  • High power gain
  • Integrated ESD protection
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • CDMA
  • W-CDMA
  • MC-GSM
  • LTE
  • WiMAX


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Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 700 2700 MHz
PL(1dB) nominal output power at 1 dB gain compression 10 W
Test signal: 2-c W-CDMA
Gp power gain VDS = 28 V [0] 17 dB
ηD drain efficiency VDS = 28 V [0] 22 %
ACPR5M adjacent channel power ratio (5 MHz) VDS = 28 V [0] -47.3 dBc

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP8G27-10 HVSON16
sot1371-1_po sot1371-1_fr
Reel 7" Q1/T1 in Drypack Active Standard Marking BLP8G27-10Z
(9340 689 76515)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
0 GND ground (exposed die pad)
1 n.c. no connection
2 n.c. not connected
3 G gate
4 G gate
5 G gate
6 G gate
7 n.c. not connected
8 n.c. not connected
9 n.c. not connected
10 n.c. not connected
11 D drain
12 D drain
13 D drain
14 D drain
15 n.c. not connected
16 n.c. not connected


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLP8G27-10 BLP8G27-10Z BLP8G27-10 Always Pb-free 3 3
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Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP8G27-10 9340 689 76515 BLP8G27-10Z DigiKey Buy Request samples

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