Mobile Broadband

Our LDMOS RF power devices offer you robust solutions covering all cellular standards (GSM/EDGE, CDMA, TD-SCDMA, W-CDMA/UMTS, LTE) and WiMAX bands. Choose from a complete line-up of power transistors operating from 400 MHz right up to 3.8 GHz.

By using LDMOS technology, they deliver enhanced RF performance with unparalleled linearity and power gain. LDMOS also offers today's highest levels of system efficiency, requiring less energy to power the network infrastructure. This enables network operators to deliver next-generation cellular services and connectivity to consumers for less operational expenditure.

To help you design-in and integrate our solutions in the shortest time possible, we offer various design and simulation information. It includes layout files, best-in-class large signal models, loadpull and S-parameters data.

Featured products View all products

BLC10G22XS-551AVT

550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2100 MHz to 2200 MHz.

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BLM9D2327-26B

The BLM9D2327-26B is a thermally enhanced 2-stage fully integrated MMIC solution using Ampleon's state of the art GEN9 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 2300 MHz to 2700 MHz. Available in PQFN outline.

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Key features and benefits

• Highest efficiency
• Best ruggedness
• Best product consistency
• Advanced 2- and 3-way Doherty amplifier designs
• Highest power, single-ended and push-pull devices

Key applications View all applications

• Cellular base stations – MC-GSM, GSM- EDGE, (TD-S)CDMA, W-CDMA / UMTS, LTE
• WiMAX base stations