Mobile Broadband

Our LDMOS RF power devices offer you robust solutions covering all cellular standards (GSM/EDGE, CDMA, TD-SCDMA, W-CDMA/UMTS, LTE) and WiMAX bands. Choose from a complete line-up of power transistors operating from 400 MHz right up to 3.8 GHz.

By using LDMOS technology, they deliver enhanced RF performance with unparalleled linearity and power gain. LDMOS also offers today's highest levels of system efficiency, requiring less energy to power the network infrastructure. This enables network operators to deliver next-generation cellular services and connectivity to consumers for less operational expenditure.

To help you design-in and integrate our solutions in the shortest time possible, we offer various design and simulation information. It includes layout files, best-in-class large signal models, loadpull and S-parameters data.

BLP8G10S-270PW

270 W LDMOS plastic packaged symmetric Doherty power transistor for base station applications at frequencies from 700 MHz to 900 MHz.

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BLC9H10XS-60P

60 W LDMOS packaged symmetric power transistor for base station applications at frequencies from 400 MHz to 1000 MHz.

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BLC9H10XS-300P

300 W LDMOS power transistor for base station applications at frequencies from 600 MHz to 960 MHz.

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Key features and benefits

• Highest efficiency
• Best ruggedness
• Best product consistency
• Advanced 2- and 3-way Doherty amplifier designs
• Highest power, single-ended and push-pull devices

Key applications View all applications

• Cellular base stations – MC-GSM, GSM- EDGE, (TD-S)CDMA, W-CDMA / UMTS, LTE
• WiMAX base stations

Documentation View all documentation

Application note

Mounting and Soldering of RF transistors

2016-02-17

Brochure

24/7-RF - Version 2 - 2017

2017-05-31