0.4 - 1.0 GHz transistors

Delivering enhanced RF performance with unparalleled linearity and power gain, our LDMOS 400 – 1000 MHz devices also offer you the highest levels of system efficiency. Requiring less energy to power the network infrastructure, operators can now deliver next-generation cellular services and connectivity to consumers for less operational expenditure.

To help you design-in and integrate our solutions in the shortest time possible, we offer various design and simulation information. It includes layout files, best-in-class large signal models, loadpull and S-parameters data.

Featured products View all products

BLC9H10XS-600A

600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 616 MHz to 960 MHz.

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BLP9H10-30G

30 W plastic LDMOS power transistor for base station applications at frequencies from 616 MHz to 960 MHz.

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Key features and benefits

• Highest efficiency
• Best ruggedness
• Best product consistency
• Advanced 2- and 3-way Doherty amplifier designs
• Highest power, single-ended and push-pull devices

Key applications View all applications

• Cellular base stations – MC-GSM, GSM- EDGE, (TD-S)CDMA, W-CDMA / UMTS, LTE

Documentation View all documentation

Application note

Mounting and Soldering of RF transistors

2016-02-17