BLF7G20L-90P
Download datasheetPower LDMOS transistor
90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for broadband operation (1427 MHz to 2170 MHz)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Applications
- RF power amplifiers for base stations and multi carrier applications
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1427 | 2170 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 90 | W | |||
| Test signal: GSM EDGE | ||||||
| Gp | power gain | PL(AV) = 40 W; VDS = 28 V | 18.3 | 19.5 | dB | |
| RLin | input return loss | PL(AV) = 40 W; VDS = 28 V; IDq = 550 mA | -15 | -8 | dB | |
| ηD | drain efficiency | PL(AV) = 40 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 550 mA | 38 | 41 | % | |
| PL(AV) | average output power | 40 | W | |||
| ACPR600k | adjacent channel power ratio (600 kHz) | PL(AV) = 40 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 550 mA | -74 | -70.5 | dBc | |
| ACPR400k | adjacent channel power ratio (400 kHz) | PL(AV) = 40 W; VDS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; IDq = 550 mA | -61 | -58 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLF7G20L-90P | ACC-780 (SOT1121A) |
sot1121a_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF7G20L-90P,118 (934064087118) |
| Bulk Pack | Withdrawn | Standard Marking |
BLF7G20L-90P,112 (934064087112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| 1805 MHz to 1880 MHz asymmetrical Doherty amplifier with the BLF7G20LS-90P and BLF7G21LS-160P | Application note | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2026-04-17 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2026-06-15 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF7G20L(S)-90P (Data sheet) | Design support | 2012-02-24 | |
| Printed-Circuit Board (PCB) BLF7G20L(S)-90P & BLF7G21L(S)-160P (AN10951) | Design support | 2012-02-24 | |
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 |