Power LDMOS transistor

500 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 600 MHz to 960 MHz.

Features and benefits

  • Excellent ruggedness
  • High efficiency
  • Low thermal resistance providing excellent thermal stability
  • Lower output capacitance for improved performance in Doherty applications
  • Designed for low memory effects providing excellent digital pre-distortion capability
  • Internal integrated wideband input and output matching for ease of use
  • Integrated double sided ESD protection
  • Bias through video leads
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifiers for base stations and multi carrier applications in the 600 MHz to 960 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 600 960 MHz
PL(3dB) nominal output power at 3 dB gain compression 600 W
Test signal: 1-c W-CDMA
VDS drain-source voltage 48 V
Gp power gain PL(AV) = 76 W [0] 17.5 18.3 dB
RLin input return loss PL(AV) = 76 W [0] -12.7 -9 dB
ηD drain efficiency PL(AV) = 76 W [0] 47 51 %
ACPR adjacent channel power ratio PL(AV) = 76 W [0] -34.8 -32 dBc

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP9H10S-500AWT OMP-780-6F-1
(OMP-780-6F-1)
omp-780-6f-1_po.pdf TR13, 100-fold, 44 mm, dry pack Active Standard Marking BLP9H10S-500AWTY
(9349 603 18518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 G gate
3 DL decoupling lead
4 D drain
5 D drain
6 DL decoupling lead
7 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer