BLF6G10LS-135RN
Download datasheetPower LDMOS transistor
135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Features and benefits
- Easy power control
 - Integrated ESD protection
 - Enhanced ruggedness
 - High efficiency
 - Excellent thermal stability
 - Designed for broadband operation (700 MHz to 1000 MHz)
 - Internally matched for ease of use
 - Compliant to Directive 2002/95/EC, regarding RoHS
 
Applications
- RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations
 - Multi carrier applications in the 700 MHz to 1000 MHz frequency range
 
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit | 
|---|---|---|---|---|---|---|
| frange | frequency range | 700 | 1000 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 135 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 26.5 W; VDS = 28 V | 20 | 21 | dB | |
| RLin | input return loss | PL(AV) = 26.5 W; VDS = 28 V; IDq = 950 mA | -10 | -6.5 | dB | |
| ηD | drain efficiency | PL(AV) = 26.5 W; VDS = 28 V; 869 MHz < f < 894 MHz; IDq = 950 mA | 26 | 28 | % | |
| PL(AV) | average output power | 26.5 | W | |||
| ACPR | adjacent channel power ratio | PL(AV) = 26.5 W; VDS = 28 V; 869 MHz < f < 894 MHz; IDq = 950 mA | -39 | -36.5 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | 
Package type, (Package outline)  | 
Outline version | Packing | Product status | Marking | 
Orderable part number, (Ordering code (12NC))  | 
|---|---|---|---|---|---|---|
| BLF6G10LS-135RN | ACC-780 (SOT502B)  | 
sot502b_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking | 
BLF6G10LS-135RN,11 (9340 632 07118)  | 
| Bulk Pack | Withdrawn | Standard Marking | 
BLF6G10LS-135RN:11 (9340 632 07112)  | 
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol | 
|---|---|---|---|---|
| 1 | D | drain | 
 
 | 
 
 | 
| 2 | G | gate | ||
| 3 | S | source | 
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 | 
Design support
| Title | Type | Date | |
|---|---|---|---|
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 |