Power LDMOS transistor

A 100 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 1500 MHz.

Features and benefits

  • Designed for broadband operation
  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • Excellent stability
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Broadcast transmitter applications
  • Industrial, scientific and medical applications
  • Applicable at frequencies from HF to 1500 MHz

Downloads

Datasheet
All models
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLP15H9S100G

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 1500 MHz
PL(1dB) nominal output power at 1 dB gain compression 100 W
Test signal: Pulsed RF
VDS drain-source voltage 50 V
Gp power gain PL = 100 W [0] 18 19 dB
ηD drain efficiency PL = 100 W [0] 53 56 %
RLin input return loss PL = 100 W [0] -14 -9 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP15H9S100G TO270
(SOT1483-1)
sot1483-1_po.pdf TR13; 500-fold; 24 mm; dry pack Active Standard Marking BLP15H9S100GZ
(9349 603 12515)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP15H9S100G 9349 603 12515 BLP15H9S100GZ DigiKey Buy Request samples
RFMW Buy