Power LDMOS transistor

20 W plastic LDMOS power transistor for general purpose applications at frequencies from 400 MHz to 2700 MHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Designed for broadband operation
  • Excellent thermal stability
  • High power gain
  • Integrated ESD protection
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • Radars & avionics
  • Broadcast transmitter applications
  • Communications
  • Industrial, scientific and medical applications


All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 2700 MHz
PL(1dB) nominal output power at 1 dB gain compression 20 W
Test signal: Pulsed RF
VDS drain-source voltage 1200-1400 MHz [0] 28 V
Gp power gain 1200-1400 MHz [0] 19 dB
ηD drain efficiency 1200-1400 MHz [0] 63 %
PL(1dB) output power at 1 dB gain compression 1200-1400 MHz [0] 43 dBm
RLin input return loss 1200-1400 MHz [0] -9 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP0427M9S20G TO270
sot1483-1_po.pdf Reel 7" Q1/T1 in Drypack Active Standard Marking BLP0427M9S20GZ
(9349 601 08515)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLP0427M9S20G BLP0427M9S20GZ BLP0427M9S20G 3 3
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP0427M9S20G 9349 601 08515 BLP0427M9S20GZ DigiKey Buy Request samples

Design support

Title Type Date
PCB Design BLP0427M9S20(G) (Data sheet) Design support 2020-02-07