September 15, 2023

Ampleon at the European Microwave Week (EuMW 2023) in Berlin


As the leading global partner in RF Power, Ampleon will feature and demonstrate its latest LDMOS and GaN RF power transistors and integrated products at booth #313C of September 19 to 21 at this year’s European Microwave Week (EuMW 2023), the largest trade show dedicated to Microwaves and RF in Europe.

Ampleon will be presenting the solutions highlight the latest for 5G telecom applications including a broad range of highly efficient small cell, integrated massive MIMO, LDMOS Doherty drivers as well as high power final stage GaN devices suitable for use in all 5G frequency bands.

Furthermore, the Ampleon booth will feature our latest solid state power amplifiers targeting industrial, particle acceleration, medical, aerospace, and broadcast applications. These GaN RF products are specifically designed to deliver the next level of high-power, continuous-wave solutions specifically engineered for the best in efficiency while achieving the lowest possible thermal resistance. Also on display will be the industry’s most rugged solid state ART LDMOS Transistors that are ideally suited as RF sources for plasma generators, CO2 laser drivers, magnetic resonance imaging and fusion energy applications.

Visitors to the Ampleon booth (#313C) will be able to see selected key products from the wireless infrastructure portfolio including innovative GaN and LDMOS RF power solutions for 5G base station applications that offer industry-leading performance. Our solutions highlight the latest for 5G Telecom applications including a broad range of highly efficient small cell, high performance massive MIMO amplifier solutions, LDMOS macro drivers as well as high power macro final stage GaN devices covering key 5G frequency bands.


Massive MIMO RF Power solutions

Ampleon is showcasing the latest GaN amplifier solutions including.

C5H2350N10

  • Class AB 10-Watt GaN driver
  • Versatile wideband performance
  • Cost-effective and compact DFN 4.5 x 4 mm package
  • Enabling compact massive MIMO GaN amplifier line up

C5H2327N110A

  • High Efficiency Doherty GaN Final
  • 400 MHz RF wideband performance
  • Compact DFN 7 x 6.5 mm
  • Enabling compact massive MIMO PA line up

C5H3440N70D

  • High efficiency Doherty GaN final
  • 600 MHz wideband performance
  • Compact QFN 8 x 8 mm package
  • Enabling compact massive MIMO GaN PA line up

Small Cell RF Power solutions

B10G3336N16DL

  • 3-stage fully input- and output matched integrated LDMOS Doherty PA in 7 x 7 mm LGA package
  • High Gain and High Efficiency in Small Cell as final stage, High Linearity in driver mode
  • Compact and low-cost solution with outstanding thermal properties
  • Designed for wide signal bandwidth application (300 MHz) with Ultra VBW

B10G4750N12DL

  • 3-stage fully input- and output matched integrated LDMOS Doherty PA in 7 x 7 mm LGA package
  • High Gain and High Efficiency in Small Cell as final stage
  • Compact and low-cost solution with outstanding thermal properties
  • Designed for broadband operation

Macro driver and final stage RF Power solutions

B10H0710N40D

  • Multiband, highly efficient driver for 40, 60 and 80 W sub-1 GHz Macro base stations
  • Compact and cost-effective design: 12 x 8 mm footprint, single-BOM reconfigurable layout, no interstage isolator

C4H10P600A

  • Highly efficient GaN Macro Doherty final for 60 and 80 W Macro base stations suitable for applications in 600 - 1000 MHz frequency range
  • Compact and cost-effective design due to OMP780 footprint
  • Released

C4H24F550AV

  • High power GaN asymmetrical Doherty
  • Industry high gain and efficiency with > 500 W peak power on 780-footprint
  • Air cavity ceramic packaging

C4H27F400AV

  • High power GaN asymmetrical Doherty
  • Compact highly efficient design in 780-footprint
  • 194 MHz IBW capability
  • Air cavity ceramic packaging

B11G3742N81D

  • Multiband, highly efficient driver for 40, 60 and 80 W Macro base stations
  • Compact and cost-effective design: 12 x 7 mm footprint, single-BOM reconfigurable layout, no interstage isolator

If you have any questions, please contact us or click on the button below to request a meeting on site with one of our experts

We look forward to seeing you in Berlin


June 8, 2023

IEEE International Microwave Symposium 2023


Ampleon is participating in the IEEE International Microwave Symposium (IMS), held in San Diego, CA, USA and is introducing several new gallium nitride (GaN) and LDMOS solutions intended for use in wireless infrastructure, aerospace and defense, NCC (non-cellular communication), ISM (industrial, scientific and medical), cooking and defrosting applications.

Visitors to the Ampleon booth (#1835) will be able to see selected key products from the wireless infrastructure portfolio including innovative GaN and LDMOS RF power solutions for 5G base station applications that offer industry-leading performance. Our solutions highlight the latest for 5G Telecom applications including a broad range of highly efficient small cell, high performance massive MIMO amplifier solutions, LDMOS macro drivers as well as high power macro final stage GaN devices covering key 5G frequency bands.


Massive MIMO RF Power solutions

Come and see us at 11 a.m. or 2 p.m. on our Booth #1835 at IMS 2023 for a live demo of BLM9D3538-12AM LDMOS driver and C5H3337N110D GaN final stage. The outstanding performance is achieved on the 5G frequency band of 3.3 to 3.7 GHz, utilizing Ampleon’s LDMOS and GaN power amplifiers supporting 400 MHz signal bandwidth. Combined with AMD’s Zynq RFSoC DFE Adaptive Radio SoC, excellent power amplifier linearity and efficiency has been achieved. Please also join us to discuss the details of the latest amplifier solutions.

If you have any questions or wish to plan a meeting at IMS, please do not hesitate to Contact us

We look forward to seeing you in San Diego!