Power GaN transistor

10 W GaN packaged power transistor for base station applications.

Features and benefits

  • Excellent digital pre-distortion capability
  • High efficiency
  • Designed for broadband operation
  • Lower output capacitance for improved performance in applications
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifier for base stations and multi carrier applications in the 1800 MHz to 5000 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1800 5000 MHz
PL(5dB) nominal output power at 5 dB gain compression 10 W
Test signal: Pulsed CW
VDS drain-source voltage [0] 50 V
Gp power gain PL = 27.5 dBm [0] 14.3 15.8 dB
ηD drain efficiency PL = 27.5 dBm [0] 9 13 %

Package / Packing

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
C5H2350N10 DFN-4.5x4
(DFN-4.5x4-6-1)
dfn-4.5x4-6-1_po TR7; 1000-fold; 12 mm; dry pack Active Standard Marking C5H2350N10Z
(934960691515)
TR13; 3000-fold; 12 mm; dry pack Active Standard Marking C5H2350N10X
(934960691525)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 n.c. not connected
2 gate gate
3 n.c. not connected
4 n.c. not connected
5 drain drain
6 n.c. not connected

Ordering & availability

Type number 12NC OPN Distributor Buy online Samples
C5H2350N10 934960691515 C5H2350N10Z DigiKey Buy Not available
Mouser Buy
RFMW Buy
C5H2350N10 934960691525 C5H2350N10X DigiKey Buy Request samples

No documentation available.