Power GaN transistor

110 W GaN Doherty RF power transistor for base station applications at frequencies from 3300 MHz to 3700 MHz.

Features and benefits

  • Compact 8 mm x 8 mm QFN package
  • Optimized for 5G mMIMO application
  • High efficiency Doherty configuration
  • Designed for broadband operation
  • Internally matched for ease of use and compact layout
  • Excellent digital pre-distortion capability

Applications

  • RF power amplifier for base stations and multi carrier applications in the 3300 MHz to 3700 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 3300 3700 MHz
PL(5dB) nominal output power at 5 dB gain compression 110 W
Test signal: Pulsed CW
VDS drain-source voltage PL(AV) = 41.7dBm (14.8 W) [0] 50 V
Gp power gain PL(AV) = 41.7dBm (14.8 W) [0] 13.4 15 dB
ηD drain efficiency PL(AV) = 41.7dBm (14.8 W) [0] 49.5 57 %

Package / Packing

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
C5H3337N110D QFN-8x8
(QFN-8x8-20-1)
qfn-8x8-20-1_po TR7; 500-fold; 16 mm; dry pack Active Standard Marking C5H3337N110DZ
(9349 607 02515)
TR13; 2000-fold; 16 mm; dry pack Active Standard Marking C5H3337N110DX
(9349 607 02525)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1, 5, 9, 11,12, 17 NC no connection
2 RF_IN_carrier RF input of carrier
3, 7, 8, 18, 19 NC no connection [1]
4 RF_IN_peaking RF input of peaking
6 VGS(peaking) gate-source voltage of peaking
10, 16 VDS drain-source voltage
13, 14, 15 RF_OUT RF output
20 VGS(carrier) gate-source voltage of carrier

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
C5H3337N110D 9349 607 02515 C5H3337N110DZ RFMW Buy Request samples
C5H3337N110D 9349 607 02525 C5H3337N110DX RFMW Buy Request samples

Recommended line-up

No documentation available.