Power GaN transistor

100 W GaN packaged Doherty power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz.

Features and benefits

  • Excellent digital pre-distortion capability
  • High efficiency
  • Designed for broadband operation
  • Lower output capacitance for improved performance in Doherty applications
  • Internally matched for ease of use
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifier for base stations and multi carrier applications in the 2300 MHz to 2700 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2300 2700 MHz
PL(3dB) nominal output power at 3 dB gain compression 100 W
Test signal: 1-c W-CDMA
VDS drain-source voltage f = 2496 MHz to 2690 MHz [0] [1] 50 V
Gp power gain f = 2496 MHz to 2690 MHz [0] [1] 15 dB
ηD drain efficiency f = 2496 MHz to 2690 MHz [0] [1] 57 %
PL(AV) average output power f = 2496 MHz to 2690 MHz [0] [1] 41.5 dBm
IDq quiescent drain current f = 2496 MHz to 2690 MHz [0] [1] 50 mA
ACPR adjacent channel power ratio f = 2496 MHz to 2690 MHz [0] [1] -27.1 dBc

Package / Packing

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
C4H2327N110A DFN-7x6.5
(DFN-7x6.5-6-1)
dfn-7x6.5-6-1_po TR13; 3000-fold; 16 mm; dry pack Active Standard Marking C4H2327N110AX
(934960422525)
TR7; 1000-fold; 16 mm; dry pack Active Standard Marking C4H2327N110AZ
(934960422515)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 gate1 gate 1
2 n.c. not connected
3 gate2 gate 2
4 drain2 drain 2
5 n.c. not connected
6 drain1 drain 1

Ordering & availability

Type number 12NC OPN Distributor Buy online Samples
C4H2327N110A 934960422525 C4H2327N110AX RFMW Buy Not available
DigiKey Buy
C4H2327N110A 934960422515 C4H2327N110AZ RFMW Buy Request samples
DigiKey Buy

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No documentation available.