C4H15P400A
Request datasheetC4H15P400A
Request datasheetPower GaN transistor
The C4H15P400A is a 400 W GaN on Silicon Carbide HEMT packaged asymmetric Doherty power transistor for base station applications at frequencies from 1432 MHz to 1517 MHz.
Features and benefits
- Excellent digital pre-distortion capability
- High efficiency
- Designed for wideband operation
- Lower output capacitance for improved performance in Doherty applications
- Internally matched for ease of use
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifier for base stations single and multi-carrier applications in the 1432 MHz to 1517 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1432 | 1517 | MHz | ||
| PL(5dB) | nominal output power at 5 dB gain compression | 300 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| IDQ | quiescent drain current | f = 1432 to 1517 MHz [0] [1] | 180 | mA | ||
| VDS | drain-source voltage | f = 1432 to 1517 MHz [0] [1] | 50 | V | ||
| PL(AV) | average output power | f = 1432 to 1517 MHz [0] [1] | 47.5 | dBm | ||
| Gp | power gain | f = 1432 to 1517 MHz [0] [1] | 18.4 | dB | ||
| ηD | drain efficiency | f = 1432 to 1517 MHz [0] [1] | 57.1 | % | ||
| ACPR | adjacent channel power ratio | f = 1432 to 1517 MHz [0] [1] | -30.7 | dBc | ||
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| C4H15P400A | OMP-780 (OMP-780-4F-1) |
omp-780-4f-1_po | TR13; 300-fold; 44 mm dry pack | Active | Standard Marking |
C4H15P400AY1 (9349 610 75535) |
| TR13; 100-fold; 44 mm dry pack | Active | Standard Marking |
C4H15P400AZ1 (9349 610 75518) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | G1 | gate1 (main) |
|
|
| 2 | G2 | gate2 (peak) | ||
| 3 | D2 | drain2 (peak) | ||
| 4 | D1 | drain1 (main) | ||
| 5 | S | source [2] |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2025-02-03 | |
| Thermal characteristics of GaN power transistors | Application note | 2024-09-01 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
Recommended line-up
No documentation available.