BLC10G22LS-240PVT
Download datasheetPower LDMOS transistor
240 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2200 MHz.
Features and benefits
- Excellent ruggedness
- Excellent video bandwidth enabling full band operation
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to 2200 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2110 | 2220 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 240 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| VDS | drain-source voltage | PL(AV) = 60 W [0] | 28 | V | ||
| Gp | power gain | PL(AV) = 60 W [0] | 19.7 | dB | ||
| ηD | drain efficiency | PL(AV) = 60 W [0] | 30 | % | ||
| PL(AV) | average output power | PL(AV) = 60 W [0] | 60 | W | ||
| ACPR5M | adjacent channel power ratio (5 MHz) | PL(AV) = 60 W [0] | -30 [1] | dBc | ||
| IDq | quiescent drain current | PL(AV) = 60 W [0] | 1600 | mA | ||
Package / Packing
All type numbers in the table below are discontinued.
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLC10G22LS-240PVT | ACP-780 (SOT1275-1) |
sot1275-1_po | Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLC10G22LS-240PVTY (9349 600 67518) |
| Tray, NonBakeable, Multiple in Drypack | Discontinued | Standard Marking |
BLC10G22LS-240PVTZ (9349 600 67517) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain 1 (main) |
|
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| 2 | D2 | drain2 (peak) | ||
| 3 | G1 | gate 1 (main) | ||
| 4 | G2 | gate 2 (peak) | ||
| 5 | VD | video decoupling (main) | ||
| 6 | VD | video decoupling (peak) | ||
| 7 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Power LDMOS transistor | Data sheet | 2017-05-24 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| BLC10G22LS-240PVT Model for ADS 2016 (Keysight Advanced Design System) | Simulation model | 2017-04-21 | |
| Printed-Circuit Board (PCB) BLC10G22LS-240PVT (Data sheet) | Design support | 2018-04-23 |