Power LDMOS transistor

120 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.

Features and benefits

  • Excellent ruggedness
  • High efficiency
  • Low thermal resistance providing excellent thermal stability
  • Designed for broadband operation
  • Lower output capacitance for improved performance in Doherty applications
  • Designed for low memory effects providing excellent pre-distortability
  • Internally matched for ease of use
  • Integrated ESD protection
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifier for W-CDMA base stations and multi carrier applications in the 920 MHz to 960 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 920 960 MHz
PL(3dB) nominal output power at 3 dB gain compression 120 W
Test signal: 1-c W-CDMA
VDS drain-source voltage 925 to 960 MHz [0] 28 V
Gp power gain 925 to 960 MHz [0] 20 dB
ηD drain efficiency 925 to 960 MHz [0] 50 %
PL(AV) average output power 925 to 960 MHz [0] 18 W
ACPR adjacent channel power ratio 925 to 960 MHz [0] -28 [1] dBc
IDq quiescent drain current 925 to 960 MHz [0] 150 mA

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLC9G10XS-120A SOT1273-1
(SOT1273-1)
sot1273-1_po.pdf Reel 13" Q1/T1 in Drypack Active Standard Marking BLC9G10XS-120AY
(9349 601 75518)
Tray, NonBakeable, Multiple in Drypack Active Standard Marking BLC9G10XS-120AZ
(9349 601 75517)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Design support

Title Type Date
PCB Design BLC9G10XS-120A (Data sheet) Design support 2018-12-31
BLC9G10XS-120A ADS-2016 Simulation model 2018-12-31