Power LDMOS transistor

A 100 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz.

Features and benefits

  • Designed for broadband operation
  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • Excellent stability
  • For RoHS compliance see the product details on the Ampleon website


  • Broadcast transmitter applications
  • Industrial, scientific and medical applications
  • Applicable at frequencies from HF to 2 GHz


All application notes
All documentation

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Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 2000 MHz
PL(1dB) nominal output power at 1 dB gain compression 100 W
Test signal: Pulsed RF
VDS drain-source voltage 50 V
Gp power gain PL = 100 W [0] 18 19 dB
ηD drain efficiency PL = 100 W [0] 59 63 %
RLin input return loss PL = 100 W [0] -14 -6 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP15H9S100 TO270
to270_2f-1 TR13; 500-fold; 24 mm; dry pack Active Standard Marking BLP15H9S100Z
(9349 602 50515)
TR7; 100-fold; 24 mm; dry pack Active Standard Marking BLP15H9S100XY
(9349 602 50538)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source