Power GaN transistor

The C4H15P400A is a 400 W GaN on Silicon Carbide HEMT packaged asymmetric Doherty power transistor for base station applications at frequencies from 1432 MHz to 1517 MHz.

Features and benefits

  • Excellent digital pre-distortion capability
  • High efficiency
  • Designed for wideband operation
  • Lower output capacitance for improved performance in Doherty applications
  • Internally matched for ease of use
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifier for base stations single and multi-carrier applications in the 1432 MHz to 1517 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1432 1517 MHz
PL(5dB) nominal output power at 5 dB gain compression 300 W
Test signal: 1-c W-CDMA
IDQ quiescent drain current f = 1432 to 1517 MHz [0] [1] 180 mA
VDS drain-source voltage f = 1432 to 1517 MHz [0] [1] 50 V
PL(AV) average output power f = 1432 to 1517 MHz [0] [1] 47.5 dBm
Gp power gain f = 1432 to 1517 MHz [0] [1] 18.4 dB
ηD drain efficiency f = 1432 to 1517 MHz [0] [1] 57.1 %
ACPR adjacent channel power ratio f = 1432 to 1517 MHz [0] [1] -30.7 dBc

Package / Packing

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
C4H15P400A OMP-780
(OMP-780-4F-1)
omp-780-4f-1_po TR13; 300-fold; 44 mm dry pack Active Standard Marking C4H15P400AY1
(9349 610 75535)
TR13; 100-fold; 44 mm dry pack Active Standard Marking C4H15P400AZ1
(9349 610 75518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 G1 gate1 (main)
2 G2 gate2 (peak)
3 D2 drain2 (peak)
4 D1 drain1 (main)
5 S source [2]

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
C4H15P400A 9349 610 75535 C4H15P400AY1 RFMW Buy Request samples
C4H15P400A 9349 610 75518 C4H15P400AZ1 RFMW Buy Request samples

Recommended line-up

No documentation available.