BLF7G10LS-250
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
Power LDMOS transistor
250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.
Features and benefits
- Excellent ruggedness
 - High efficiency
 - Low thermal resistance providing excellent thermal stability
 - Designed for broadband operation (869 MHz to 960 MHz)
 - Lower output capacitance for improved performance in Doherty applications
 - Designed for low memory effects providing excellent pre-distortability
 - Internally matched for ease of use (input and output)
 - Integrated ESD protection
 - Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
 
Applications
- RF power amplifiers for W-CDMA base stations and multi carrier applications in the 869 MHz to 960 MHz frequency range
 
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit | 
|---|---|---|---|---|---|---|
| frange | frequency range | 920 | 960 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 250 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 60 W; VDS = 30 V [0] | 18.5 | 19.5 | dB | |
| RLin | input return loss | PL(AV) = 60 W; VDS = 30 V; IDq = 1800 mA [0] | -15.5 | -10 | dB | |
| ηD | drain efficiency | PL(AV) = 60 W; VDS = 30 V; 920 MHz ≤ f ≤ 960 MHz; IDq = 1800 mA [0] | 27 | 30.5 | % | |
| PL(AV) | average output power | [0] | 60 | W | ||
| ACPR | adjacent channel power ratio | PL(AV) = 60 W; VDS = 30 V; 920 MHz ≤ f ≤ 960 MHz; IDq = 1800 mA [0] | -34 | -31 | dBc | |
Package / Packing
| Type number | 
Package type, (Package outline)  | 
Outline version | Packing | Product status | Marking | 
Orderable part number, (Ordering code (12NC))  | 
|---|---|---|---|---|---|---|
| BLF7G10LS-250 | ACC-780 (SOT502B)  | 
sot502b_po | Reel 13" Q1/T1 | Transferred | Standard Marking | 
BLF7G10LS-250,118 (9340 656 07118)  | 
| Bulk Pack | Transferred | Standard Marking | 
BLF7G10LS-250,112 (9340 656 07112)  | 
|||
| Reel 11¼" Q1/T1 in LargePack | Transferred | Standard Marking | 
BLF7G10LS-250JZ (9340 656 07135)  | 
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol | 
|---|---|---|---|---|
| 1 | D | drain | 
 
 | 
 
 | 
| 2 | G | gate | ||
| 3 | S | source | 
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples | 
|---|---|---|---|---|---|
| BLF7G10LS-250 | 9340 656 07118 | BLF7G10LS-250,118 | Flip Electronics | Buy | Not available | 
| BLF7G10LS-250 | 9340 656 07112 | BLF7G10LS-250,112 | Flip Electronics | Buy | Not available | 
| BLF7G10LS-250 | 9340 656 07135 | BLF7G10LS-250JZ | Flip Electronics | Buy | Not available | 
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2016-11-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 | 
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF7G10L(S)-250 (Data sheet) | Design support | 2012-02-24 |