CLS3H3135L-700
Request datasheetThis product is subject to export control regulations. An End Use Statement is required.
CLS3H3135L-700
Request datasheetThis product is subject to export control regulations. An End Use Statement is required.
Long pulse S-band GaN-SiC HEMT
The CLS3H3135L-700 and CLS3H3135LS-700 are 700 W long pulse GaN-SiC HEMTs power transistors covering the frequency band from 3.1 GHz to 3.5 GHz.
Features and benefits
- 700 W output power
- Internally pre- and post-matched
- Long pulse capability of 300 μs with 10 % duty cycle
- High efficiency
- High input impedance
- Low thermal resistance
- Excellent ruggedness
- For RoHS compliance see the product details on the Ampleon website
Applications
- S-band power amplifiers for ERP and CHIRP radar systems in the frequency range from 3.1 GHz to 3.5 GHz
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 3100 | 3500 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 700 | W | |||
| Test signal: Pulsed CW | ||||||
| VDS | drain-source voltage | 3300 MHz [0] | 50 | V | ||
| PL | output power | 3300 MHz [0] [1] | >700 | W | ||
| Gp | power gain | 3300 MHz [0] [2] | 13.2 | dB | ||
| ηD | drain efficiency | 3300 MHz [0] [1] | 57 | % | ||
| RLin | input return loss | 3300 MHz [0] [2] | 10.6 | dB | ||
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| CLS3H3135L-700 | ACC-780 (SOT502A) |
sot502a_po | Tray; 20-fold; non-dry pack | Active | Standard Marking |
CLS3H3135L-700U (934960662112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source [3] |
Ordering & availability
| Type number | 12NC | OPN | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| CLS3H3135L-700 | 934960662112 | CLS3H3135L-700U | RFMW | Buy | Request samples |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2026-07-28 | |
| Thermal characteristics of GaN power transistors | Application note | 2024-09-01 | |
| Bias module for 50 V GaN demonstration boards | Application note | 2015-12-07 | |
| High-power GaN RF transistors for L- and S-band radar - Engineered for long-pulse performance | Leaflet | 2025-09-09 | |
| RF power solutions for ISM, broadcast, navigation and safety radio applications | Brochure | 2026-09-25 | |
| RF power application reports for ISM, broadcast, navigation and safety radio applications | Brochure | 2026-09-25 | |
| Packages for RF power transistors | Leaflet | 2026-09-25 |
Recommended line-up
No documentation available.