BLF888

Download datasheet This product has been discontinued.
Click here for discontinuation information.
This product has been discontinued. Click here for discontinuation information.
The replacement is: BLF989

UHF power LDMOS transistor

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications.

Features and benefits

 

  • 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.3 A:
    • Peak envelope power load power = 500 W
    • Power gain = 19 dB
    • Drain efficiency = 46 %
    • Third order intermodulation distortion = -32 dBc
  • DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.3 A:
    • Average output power = 110 W
    • Power gain = 19 dB
    • Drain efficiency = 31 %
    • Shoulder distance = -31 dBc (4.3 MHz from center frequency)
  • Integrated ESD protection
  • Advanced flange material for optimum thermal behavior and reliability
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Designed for broadband operation (470 MHz to 860 MHz)
  • Excellent reliability
  • Internal input matching for high gain and optimum broadband operation
  • Easy power control
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Communication transmitter applications in the UHF band
  • Industrial applications in the UHF band

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLF888

UHF power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 470 860 MHz
PL(1dB) nominal output power at 1 dB gain compression 500 W
Test signal: 2-Tone, class AB
Gp power gain VDS = 50 V 18 19 dB
ηD drain efficiency VDS = 50 V; f = 860 MHz; IDq = 1.3 A 42 46 %
PL(AV) average output power 250 W
PL(PEP) peak envelope power 500 W
IMD3 third-order intermodulation distortion VDS = 50 V; IDq = 1.3 A -32 -28 dBc

Package / Packing

All type numbers in the table below are discontinued.

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF888 CDFM2
(SOT979A)
sot979a_po Bulk Pack Withdrawn Standard Marking BLF888,112
(9340 621 01112)

Discontinuation information

Type number Ordering code (12NC) Last-time buy date Last-time delivery date Replacement product DN Notice Status Comments
BLF888 9340 621 01112 2016-03-31 2016-06-30 BLF989 Ampleon-DN_201506035DN Full Withdrawal

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF888 9340 621 01112 BLF888,112 RFMW Buy Not available
DigiKey Buy

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF888 9340 621 01112 BLF888,112 RFMW Buy Not available
DigiKey Buy

Design support

Title Type Date
Printed-Circuit Board (PCB) BLF888 (Data sheet) Design support 2012-05-14