UHF power LDMOS transistor

A 800 W LDMOS power transistor for UHF radar applications in the frequency range from 400 MHz to 800 MHz.

Features and benefits

  • Designed for broadband in UHF radar applications
  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Excellent stability
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifiers for UHF radar applications in the 400 MHz to 800 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 400 800 MHz
PL(1dB) nominal output power at 1 dB gain compression 800 W
Test signal: Pulsed RF
VDS drain-source voltage PL = 750 W [0] 50 V
Gp power gain PL = 750 W [0] 19.5 20.5 dB
ηD drain efficiency PL = 750 W [0] 64 67.5 %
RLin input return loss PL = 750 W [0] -7 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLU9H0408L-800P SOT539A
(SOT539A)
sot539a_po Bulk Pack Active Standard Marking BLU9H0408L-800PU
(9349 602 64112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLU9H0408L-800P BLU9H0408L-800PU BLU9H0408L-800P Always Pb-free 1 1
Quality and reliability disclaimer

Documentation

Title Type Date
UHF power LDMOS transistor Data sheet 2020-03-26