Power LDMOS transistor

300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Features and benefits

  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • Enhanced ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (1030 MHz to 1090 MHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range


All documentation

All documents

Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1030 1090 MHz
PL(1dB) nominal output power at 1 dB gain compression 317 W
Test signal: Pulsed RF
VDS drain-source voltage 1030-1090 MHz [0] 32 V
Gp power gain 1030-1090 MHz [0] 21.5 dB
ηD drain efficiency 1030-1090 MHz [0] 64.8 %
tr rise time 1030-1090 MHz [0] 14 ns
tf fall time 1030-1090 MHz [0] 5 ns

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLA9G1011LS-300G CDFM2
sot502e_po Bulk Pack Active Standard Marking BLA9G1011LS-300GU
(9349 600 49112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLA9G1011LS-300G BLA9G1011LS-300GU BLA9G1011LS-300G Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLA9G1011LS-300G 9349 600 49112 BLA9G1011LS-300GU RFMW Buy Request samples
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Design support

Title Type Date
PCB Design BLA9G1011L(S)-300(G) (Data sheet) Design support 2017-08-24