Power GaN transistor

The C4H27F700AV is a 700 W GaN on Silicon Carbide HEMT packaged asymmetric Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

Features and benefits

  • Excellent digital pre-distortion capability
  • High efficiency
  • Designed for wideband operation
  • Lower output capacitance for improved performance in Doherty applications
  • Internally matched for ease of use
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifier for base stations single and multi-carrier applications in the 2496 MHz to 2690 MHz frequency range.

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2496 2690 MHz
PL(5dB) nominal output power at 5 dB gain compression 700 W
Test signal: 1-c W-CDMA
VDS drain-source voltage 2515 to 2675 MHz [0] [1] 52 V
Gp power gain 2515 to 2675 MHz [0] [1] 15 dB
ηD drain efficiency 2515 to 2675 MHz [0] [1] 50.2 %
IDq quiescent drain current 2515 to 2675 MHz [0] [1] 250 mA
ACPR adjacent channel power ratio 2515 to 2675 MHz [0] [1] -25.5 dBc

Package / Packing

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
C4H27F700AV ACC-780
(SOT1249B)
sot1249b_po TR13; 100-fold; 44 mm dry pack Active Standard Marking C4H27F700AVY
(9349 610 54518)
Tray; 60-fold; dry pack Active Standard Marking C4H27F700AVZ
(9349 610 54517)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1 (carrier)
2 D2 drain2 (peaking)
3 G1 gate1 (carrier)
4 G2 gate2 (peaking)
5 S source [2]
6 VDC video decoupling (carrier)
7 VDP video decoupling (peaking)

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
C4H27F700AV 9349 610 54518 C4H27F700AVY RFMW Buy Not available
C4H27F700AV 9349 610 54517 C4H27F700AVZ RFMW Buy Not available

Recommended line-up

No documentation available.