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C4H27F700AV

C4H27F700AV

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Power GaN transistor

The C4H27F700AV is a 700 W GaN on Silicon Carbide HEMT packaged asymmetric Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

Features and benefits

  • Excellent digital pre-distortion capability
  • High efficiency
  • Designed for wideband operation
  • Lower output capacitance for improved performance in Doherty applications
  • Internally matched for ease of use
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifier for base stations single and multi-carrier applications in the 2496 MHz to 2690 MHz frequency range.

Downloads

All application notes
All documentation

All documents

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2496 2690 MHz
PL(5dB) nominal output power at 5 dB gain compression 700 W
Test signal: 1-c W-CDMA
VDS drain-source voltage 2515 to 2675 MHz [0] [1] 52 V
Gp power gain 2515 to 2675 MHz [0] [1] 15 dB
ηD drain efficiency 2515 to 2675 MHz [0] [1] 50.2 %
IDq quiescent drain current 2515 to 2675 MHz [0] [1] 250 mA
ACPR adjacent channel power ratio 2515 to 2675 MHz [0] [1] -25.5 dBc

Package / Packing

Type number Package type,
(Package outline) 		Outline version Reflow-/Wave
soldering		 Packing Product status Marking Orderable part number,
(Ordering code (12NC))
C4H27F700AV ACC-780
(SOT1249B)		 sot1249b_po TR13; 100-fold; 44 mm dry pack Active Standard Marking C4H27F700AVY
(9349 610 54518)
Tray; 60-fold; dry pack Active Standard Marking C4H27F700AVZ
(9349 610 54517)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1 (carrier)
2 D2 drain2 (peaking)
3 G1 gate1 (carrier)
4 G2 gate2 (peaking)
5 S source [2]
6 VDC video decoupling (carrier)
7 VDP video decoupling (peaking)

Recommended line-up

No documentation available.