Power GaN transistor

400 W GaN packaged asymmetric Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

Features and benefits

  • Excellent digital pre-distortion capability
  • High efficiency
  • Designed for broadband operation
  • Lower output capacitance for improved performance in Doherty applications
  • Internally matched for ease of use
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifier for base stations and multi carrier applications in the 2496 MHz to 2690 MHz frequency range

Downloads

No downloads available.

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2496 2690 MHz
PL(5dB) nominal output power at 5 dB gain compression 400 W
Test signal: 1-c W-CDMA
VDS drain-source voltage PL(AV) = 56.2 W [0] 48 V
Gp power gain PL(AV) = 56.2 W [0] 13.2 14.5 dB
ηD drain efficiency PL(AV) = 56.2 W [0] 49 54 %
RLin input return loss PL(AV) = 56.2 W [0] -14 -8 dB
ACPR adjacent channel power ratio PL(AV) = 56.2 W [0] -27 -22 dBc

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
C4H27F400AV SOT1249B
(SOT1249B)
sot1249b_po Tray; 60-fold; dry pack Active Standard Marking C4H27F400AVZ
(9349 606 06517)
TR13; 100-fold;44 mm; dry pack Active Standard Marking C4H27F400AVY
(9349 606 06518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1 (main)
2 D2 drain2 (peak)
3 G1 gate1 (main)
4 G2 gate2 (peak)
5 S source
6 VDM video decoupling (main)
7 VDP video decoupling (peak)

Recommended line-up

No documentation available.