Power GaN transistor

550 W GaN packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

Features and benefits

  • Excellent digital pre-distortion capability
  • High efficiency
  • Designed for broadband operation
  • Lower output capacitance for improved performance in Doherty applications
  • Internally matched for ease of use
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifier for base stations and multi carrier applications in the 2300 MHz to 2400 MHz frequency range

Downloads

No downloads available.

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2300 2400 MHz
PL(4dB) nominal output power at 4 dB gain compression 550 W
Test signal: 1-c W-CDMA
VDS drain-source voltage PL(AV) = 67.6 W [0] 48 V
Gp power gain PL(AV) = 67.6 W [0] 15.3 16.2 dB
ηD drain efficiency PL(AV) = 67.6 W [0] 43 48 %
RLin input return loss PL(AV) = 67.6 W [0] -11 -7 dB
ACPR adjacent channel power ratio PL(AV) = 67.6 W [0] -30 -24 dBc

Package / Packing

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
C4H24F550AV ACC-780
(SOT1249B)
sot1249b_po Tray; 20-fold; dry pack Active Standard Marking C4H24F550AVZ
(934960565517)
TR13; 100-fold; 44 mm; dry pack Active Standard Marking C4H24F550AVY
(934960565518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1 (main)
2 D2 drain2 (peak)
3 G1 gate1 (main)
4 G2 gate2 (peak)
5 S source [1]
6 VDM video decoupling (main)
7 VDP video decoupling (peak)

Ordering & availability

Type number 12NC OPN Distributor Buy online Samples
C4H24F550AV 934960565517 C4H24F550AVZ DigiKey Buy Not available
RFMW Buy
C4H24F550AV 934960565518 C4H24F550AVY DigiKey Buy Request samples
RFMW Buy

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No documentation available.