BLF8G22LS-200V
Download datasheetPower LDMOS transistor
200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for broadband operation
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
- Design optimized for gull-wing
Applications
- RF power amplifiers for base stations
- Multicarrier applications in the 2110 MHz to 2170 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2110 | 2170 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 200 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 55 W; VDS = 28 V | 17.8 | 19 | dB | |
| RLin | input return loss | PL(AV) = 55 W; VDS = 28 V; IDq = 2000 mA | -13 | -7 | dB | |
| ηD | drain efficiency | PL(AV) = 55 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 2000 mA | 26 | 29 | % | |
| ACPR5M | adjacent channel power ratio (5 MHz) | PL(AV) = 55 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 2000 mA | -30 | -26 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLF8G22LS-200V | ACC-780 (SOT1244B) |
sot1244b_po | Reel 13" Q1/T1 | Discontinued | Standard Marking |
BLF8G22LS-200V,118 (9340 667 58118) |
| Bulk Pack | Discontinued | Standard Marking |
BLF8G22LS-200V,112 (9340 667 58112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source | ||
| 4 | v.l | video lead | ||
| 5 | v.l | video lead | ||
| 6 | n.c | not connected | ||
| 7 | n.c | not connected |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF8G22LS-200(G)V (Data sheet) | Design support | 2012-09-28 |