BLF6G22LS-75
Download datasheetPower LDMOS transistor
75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (2000 MHz to 2200 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for W-CDMA base stations
- Multicarrier applications in the 2000 MHz to 2200 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2000 | 2200 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 75 | W | |||
| Test signal: 2-c WCDMA | ||||||
| Gp | power gain | PL(AV) = 17 W; VDS = 28 V | 17.6 | 18.7 | dB | |
| RLin | input return loss | PL(AV) = 17 W; VDS = 28 V; IDq = 690 mA | -9.5 | -6.5 | dB | |
| ηD | drain efficiency | PL(AV) = 17 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 690 mA | 28 | 30.5 | % | |
| PL(AV) | average output power | 17 | W | |||
| IMD3 | third-order intermodulation distortion | PL(AV) = 17 W; VDS = 28 V; IDq = 690 mA | -37.5 | -34 | dBc | |
| ACPR | adjacent channel power ratio | PL(AV) = 17 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 690 mA | -41.5 | -38.5 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLF6G22LS-75 | ACC-780 (SOT502B) |
sot502b_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF6G22LS-75,118 (9340 615 59118) |
| Bulk Pack | Withdrawn | Standard Marking |
BLF6G22LS-75,112 (9340 615 59112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
No documentation available.