BLC9G22LS-160VT
Download datasheetThis product is not recommended for design-in.
Power LDMOS transistor
160 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2200 MHz.
Features and benefits
- Excellent ruggedness
- Excellent video-bandwidth enabling full band operation
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifier for W-CDMA base stations and multi carrier applications in the 2110 MHz to 2200 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2110 | 2170 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 160 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| VDS | drain-source voltage | PL(AV) = 35 W [0] | 28 | V | ||
| Gp | power gain | PL(AV) = 35 W [0] | 18.4 | dB | ||
| PL(AV) | average output power | PL(AV) = 35 W [0] | 35 | W | ||
| ηD | drain efficiency | PL(AV) = 35 W [0] | 33 | % | ||
| IDq | quiescent drain current | PL(AV) = 35 W [0] | 864 | mA | ||
| ACPR | adjacent channel power ratio | PL(AV) = 35 W [0] | -31 [1] | dBc | ||
Package / Packing
All type numbers in the table below are not recommended for design-in.
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLC9G22LS-160VT | ACP-780 (SOT1271-2) |
sot1271-2_po | Tray, NonBakeable, Multiple in Drypack | Active | Standard Marking |
BLC9G22LS-160VTZ (9349 600 66517) |
| Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLC9G22LS-160VTY (9349 600 66518) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source [2] | ||
| 4 | VD | video decoupling | ||
| 5 | VD | video decoupling | ||
| 6 | n.c. | not connected | ||
| 7 | n.c. | not connected |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Power LDMOS transistor | Data sheet | 2017-05-24 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC9G22LS-160VT (Data sheet) | Design support | 2018-04-26 |