BLC10G22XS-570AVT
Download datasheetBLC10G22XS-570AVT
Download datasheetPower LDMOS transistor
570 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2180 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to 2180 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2110 | 2180 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 630 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | PL(AV) = 93.3 W [0] | 30 | V | ||
| Gp | power gain | PL(AV) = 93.3 W [0] | 14.7 | 15.7 | dB | |
| ηD | drain efficiency | PL(AV) = 93.3 W [0] | 44 | 48 | % | |
| ACPR | adjacent channel power ratio | PL(AV) = 93.3 W [0] | -33 | -29 | dBc | |
| RLin | input return loss | PL(AV) = 93.3 W [0] | -14 | -9 | dB | |
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC10G22XS-570AVT | DFM6 (SOT1258-4) |
sot1258-4_po | Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLC10G22XS-570AVTY (9349 604 09518) |
|
| Tray, NonBakeable, Multiple in Drypack | Active | Standard Marking |
BLC10G22XS-570AVTZ (9349 604 09517) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | DP | drain (peak) |
|
|
| 2 | DM | drain (main) | ||
| 3 | GM | gate (main) | ||
| 4 | GP | gate (peak) | ||
| 5 | S | source | ||
| 6 | VDP | video decoupling (peak) | ||
| 7 | VDM | video decoupling (main) |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLC10G22XS-570AVT | 9349 604 09518 | BLC10G22XS-570AVTY | RFMW | Buy | Not available |
| BLC10G22XS-570AVT | 9349 604 09517 | BLC10G22XS-570AVTZ | DigiKey | Buy | Request samples |
| RFMW | Buy |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLC10G22XS-570AVT | 9349 604 09518 | BLC10G22XS-570AVTY | RFMW | Buy | Not available |
| BLC10G22XS-570AVT | 9349 604 09517 | BLC10G22XS-570AVTZ | DigiKey | Buy | Request samples |
| RFMW | Buy |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2021-06-10 | |
| Mounting and Soldering of RF transistors in Air Cavity Packages | Application note | 2022-09-15 | |
| Packages for RF Power Transistors | Leaflet | 2024-03-25 | |
| LDMOS Ruggedness Reliability | Other type | 2017-03-28 | |
| Efficiency Improvement of LDMOS Transistors for Base Stations: Towards the Theoretical Limit | Other type | 2017-05-02 | |
| LDMOS Technology for RF Power Amplifiers | Other type | 2017-05-03 | |
| RF Power Solutions for Wireless Infrastructure | Brochure | 2024-04-04 |
Recommended line-up
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC10G22XS-570AVT (Data sheet) | Design support | 2021-06-21 | |
| BLC10G22XS-570AVT Model for ADS (Keysight Advanced Design System) | Simulation model | 2023-05-22 |