CLF3H0035S-100
Download datasheetCLF3H0035S-100
Download datasheetBroadband RF power GaN HEMT
The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
Features and benefits
- 100 W general purpose broadband RF power GaN HEMT
- High efficiency
- Low thermal resistance
- Excellent ruggedness
- Designed for broadband operation in the frequency range from DC to 3.5 GHz
- For RoHS compliance see the product details on the Ampleon website
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 0 | 3500 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 100 | W | |||
| Test signal: Pulsed CW | ||||||
| VDS | drain-source voltage | [0] | 50 | V | ||
| PL | output power | PL = PL(3dB) [0] | 118 | W | ||
| Gp | power gain | PL = 100 W [0] | 14 | 15 | dB | |
| ηD | drain efficiency | PL = 100 W [0] | 52 | 57 | % | |
| RLin | input return loss | PL = 100 W [0] | -12 | -8 | dB | |
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| CLF3H0035S-100 | SOT467 (SOT467B) |
sot467b_po | Tray; 20-fold; non-dry pack | Active | Standard Marking |
CLF3H0035S-100U (9349 602 88112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source [1] |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| CLF3H0035S-100 | 9349 602 88112 | CLF3H0035S-100U | DigiKey | Buy | Request samples |
| RFMW | Buy | ||||
| Mouser | Buy |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Broadband RF power GaN HEMT | Data sheet | 2023-09-28 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Thermal characteristics of GaN power transistors | Application note | 2024-09-01 | |
| Measurement results of a wideband design for the 500–2500 MHz band with CLF3H0035-100 | Report | 2021-11-22 | |
| RF power solutions for ISM, broadcast, navigation and safety radio applications | Brochure | 2025-06-03 | |
| RF power application reports for ISM, broadcast, navigation and safety radio applications | Brochure | 2025-06-12 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) CLF3H0035(S)-100 (Data sheet) | Design support | 2021-12-20 | |
| CLF3H0035(S)-100 Model for ADS 2019 (Keysight Advanced Design System) | Simulation model | 2021-12-21 | |
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 |