Power LDMOS transistor

A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 1500 MHz band.

Features and benefits

  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • For RoHS compliance see the product details on the Ampleon website


  • Industrial, scientific and medical applications
  • Broadcast transmitter applications


Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 1500 MHz
PL(1dB) nominal output power at 1 dB gain compression 30 W
Test signal: Pulsed CW
VDS drain-source voltage 1400 MHz [0] 32 V
Gp power gain 1400 MHz [0] 19.3 dB
ηD drain efficiency 1400 MHz [0] 72 %
PL output power 1400 MHz [0] 30 dBm
RLin input return loss 1400 MHz [0] -17 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP15M9S30 TO270
sot1482-1_po.pdf Reel 7" Q1/T1 in Drypack Active Standard Marking BLP15M9S30Z
(9349 602 46515)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLP15M9S30 BLP15M9S30Z BLP15M9S30 3 3
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP15M9S30 9349 602 46515 BLP15M9S30Z DigiKey Buy Request samples


Design support

Title Type Date
PCB Design BLP15M9S30(G) (Data sheet) Design support 2019-10-21
BLP15M9S30 ADS-2016 Simulation model 2019-10-21