Power LDMOS transistor

A 100 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 1500 MHz band.

Features and benefits

  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Downloads

Datasheet
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All documentation

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Design tool

RF Power Lifetime Calculator

Transistor:
BLP15M9S100

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 1500 MHz
PL(1dB) nominal output power at 1 dB gain compression 100 W
Test signal: Pulsed RF, class-AB
VDS drain-source voltage 50 V
Gp power gain f = 1400 MHz: PL = 100 W [0] 14.5 15.7 dB
ηD drain efficiency f = 1400 MHz: PL = 100 W [0] 64 68 %
RLin input return loss f = 1400 MHz: PL = 100 W [0] -19 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP15M9S100 TO270
(SOT1482-1)
sot1482-1_po.pdf TR13; 500-fold; 24 mm; dry pack Active Standard Marking BLP15M9S100Z
(9349 602 42515)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLP15M9S100 BLP15M9S100Z BLP15M9S100 3 3
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP15M9S100 9349 602 42515 BLP15M9S100Z DigiKey Buy Request samples

Design support