Power LDMOS transistor

A 135 W LDMOS transistor for non cellular communication and industrial applications. The excellent ruggedness of this device makes it ideal for mobile NCC and ISM applications in the frequency range from HF to 1300 MHz.

Features and benefits

  • Designed for broadband operation
  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • Excellent stability
  • For RoHS compliance see the product details on the Ampleon website


  • Non cellular communication applications
  • Industrial, scientific and medical applications


All application notes
All documentation

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Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 1300 MHz
PL(1dB) nominal output power at 1 dB gain compression 135 W
Test signal: Pulsed RF
VDS drain-source voltage PL = 135 W [0] 32 V
Gp power gain PL = 135 W [0] 19.3 20.3 dB
RLin input return loss PL = 135 W [0] -9 -6 dB
ηD drain efficiency PL = 135 W [0] 63 67 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot1228a_po Tray; 20-fold; non-dry pack Active Standard Marking BLF944PU
(9349 606 51112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain 1
2 D2 drain 2
3 G1 gate 1
4 G2 gate 2
5 S souce

Design support