Power LDMOS transistor

This 13.6 V 25 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 941 MHz.

Features and benefits

  • High efficiency
  • Integrated dual sided ESD protection
  • Extreme ruggedness 65 : 1
  • High power gain
  • Excellent reliability
  • Wideband
  • High linearity
  • For RoHS compliance see the product details on the Ampleon website


  • TETRA, SSB and LTE mobile radio applications in VHF and UHF bands
  • Wideband radio application, frequency range from 380 MHz to 460 MHz and from 800 MHz to 870 MHz


All documentation

All documents

Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 941 MHz
PL(1dB) nominal output power at 1 dB gain compression 25 W
Test signal: CW
VDS drain-source voltage 13.6 V
Gp power gain PL = 25 W [0] 17.8 18.8 dB
ηD drain efficiency PL = 25 W [0] 68 72 %
RLin input return loss PL = 25 W [0] -18 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot1482-1_po.pdf Reel 7" Q1/T1 in Drypack Active Standard Marking BLP9LA25SZ
(9349 602 91515)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP9LA25S 9349 602 91515 BLP9LA25SZ DigiKey Buy Request samples

Design support

Title Type Date
Printed-Circuit Board (PCB) BLP9LA25S(G) (Data sheet) Design support 2020-07-07