Power LDMOS transistor

This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 520 MHz.

Features and benefits

  • High efficiency
  • Integrated dual sided ESD protection
  • Extreme ruggedness 65 : 1
  • High power gain
  • Excellent reliability
  • Wideband
  • High linearity
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • TETRA, SSB and LTE mobile radio applications in VHF and UHF bands
  • Wideband radio application, frequency range from 5 MHz to 30 MHz and from 30 MHz to 512 MHz

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 520 MHz
PL(1dB) nominal output power at 1 dB gain compression 55 W
Test signal: CW
VDS drain-source voltage 13.6 V
Gp power gain PL = 55 W [0] 18 19.6 dB
RLin input return loss PL = 55 W [0] -15.3 dB
ηD drain efficiency PL = 55 W [0] 72 75 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP5LA55S TO270
(SOT1482-1)
sot1482-1_po.pdf TR13; 500-fold; 24 mm; dry pack Active Standard Marking BLP5LA55SY
(9349 602 92515)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer