Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 2500 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

Features and benefits

  • Qualified to VDS = 75 V
  • Integrated thermal sensor
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website


  • Industrial, scientific and medical applications
    • MRI systems
    • Particle accelerators
  • Broadcast
    • FM radio
    • VHF TV
  • Communications
    • Non cellular communications
    • UHF radar


All application notes
All documentation

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Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 400 MHz
PL(1dB) nominal output power at 1 dB gain compression 2500 W
Test signal: Pulsed RF
VDS drain-source voltage PL = 2500 W [0] 75 V
Gp power gain PL = 2500 W [0] 27 28.5 dB
RLin input return loss PL = 2500 W [0] -17.7 dB
ηD drain efficiency PL = 2500 W [0] 68 72 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
ART2K5TPU OMP-1230-6F-2
omp-1230-6f-2_po TR13; 100-fold; 56 mm; dry pack Active Standard Marking ART2K5TPUY
(9349 607 36518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 FET1 temperature sense FET1
2 G1 gate1
3 G2 gate2
4 FET2 temperature sense FET2
5 D2 drain2
6 D1 drain1
7 S source

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