This product is not recommended for design-in.
The recommended type is: BLP27M810

Broadband power LDMOS transistor

10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • No internal matching for broadband operation
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances


  • RF power amplifiers for applications in the HF to 2200 MHz frequency range
  • Broadcast drivers


All models
All documentation

All documents

Design tool

RF Power Lifetime Calculator


Broadband power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 2200 MHz
PL(1dB) nominal output power at 1 dB gain compression 10 W
Test signal: 1-c W-CDMA
Gp power gain PL(AV) = 2 W; VDS = 28 V 17.3 19.3 dB
ηD drain efficiency PL(AV) = 2 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 100 mA 29 31 %
ACPR adjacent channel power ratio PL(AV) = 2 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 100 mA -39 -36 dBc

Package / Packing

All type numbers in the table below are not recommended for design-in.

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot538a_po Bulk Pack Active Standard Marking BLF640U
(9340 674 71112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source


All type numbers in the table below are not recommended for design-in.

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF640 BLF640U BLF640 Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF640 9340 674 71112 BLF640U RFMW Buy Not available
DigiKey Buy

Design support

Title Type Date
BLF640 ADS-2016 Simulation model 2017-04-14