Power LDMOS transistor

A 60 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band.

Features and benefits

  • Easy power control
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 1000 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter application

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 1000 MHz
PL(1dB) nominal output power at 1 dB gain compression 60 W
Test signal: Pulsed RF
VDS drain-source voltage 720 MHz 50 V
Gp power gain 720 MHz 18 dB
ηD drain efficiency 720 MHz 72 %
PL load power 720 MHz 60 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP10H660P HSOP4F
(SOT1223-2)
sot1223-2_po Reel 13" Q1/T1 in Drypack Active Standard Marking BLP10H660PY
(9349 600 04518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 G2 gate 2
2 G1 gate1
3 D1 drain1
4 D2 drain2
5 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP10H660P 9349 600 04518 BLP10H660PY DigiKey Buy Not available
RFMW Buy

Design support