This product is not recommended for design-in.
The recommended type is: BLP27M810

Broadband power LDMOS transistor

10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • No internal matching for broadband operation
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances


  • RF power amplifiers for applications in the HF to 2200 MHz frequency range
  • Broadcast drivers


All models
All documentation

All documents

Design tool

RF Power Lifetime Calculator


Broadband power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 2200 MHz
PL(1dB) nominal output power at 1 dB gain compression 10 W
Test signal: 1-c W-CDMA
Gp power gain PL(AV) = 2 W; VDS = 28 V 17.3 19.3 dB
ηD drain efficiency PL(AV) = 2 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 100 mA 29 31 %
ACPR adjacent channel power ratio PL(AV) = 2 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 100 mA -39 -36 dBc

Package / Packing

All type numbers in the table below are not recommended for design-in.

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot538a_po Bulk Pack Active Standard Marking BLF640U
(9340 674 71112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source


All type numbers in the table below are not recommended for design-in.

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF640 BLF640U BLF640 Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF640 9340 674 71112 BLF640U DigiKey Buy Not available

Design support

Title Type Date
BLF640 ADS-2016 Simulation model 2017-04-14