CLF06H4LS1K5P
Request datasheetCLF06H4LS1K5P
Request datasheetRF power GaN-SiC HEMT
The CLF06H4LS1K5P is a 1500 W internally pre-matched RF GaN HEMT power transistor optimized for best power and efficiency at frequencies from 580 MHz to 650 MHz.
Features and benefits
- 1500 W RF Power GaN HEMT, internally pre-matched at input, for frequencies from 580 MHz to 650 MHz
- High efficiency
- Low thermal resistance
- For RoHS compliance see the product details on the Ampleon website
Applications
- Industrial heating
- Particle accelerators
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 580 | 650 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 1600 | W | |||
| Test signal: CW pulsed | ||||||
| VDS [0] | drain-source voltage | f = 650 MHz [1] [2] | 50 | V | ||
| PL [0] | output power | f = 650 MHz [1] [2] | 1677 | W | ||
| Gp [0] | power gain | f = 650 MHz [1] [2] | 19 | dB | ||
| ηD [0] | drain efficiency | f = 650 MHz [1] [2] | 81 | % | ||
| Test signal: CW | ||||||
| VDS [0] | drain-source voltage | f = 650 MHz [1] | 50 | V | ||
| PL [0] | output power | f = 650 MHz [1] | 1628 | W | ||
| Gp [0] | power gain | f = 650 MHz [1] | 18 | dB | ||
| ηD [0] | drain efficiency | f = 650 MHz [1] | 80 | % | ||
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| CLF06H4LS1K5P | ACC-1230 (SOT539B) |
sot539b_po | 3BL-TRAY 60-fold, DP SOT539B_SIM | Active | Standard Marking |
CLF06H4LS1K5PU (9349 610 65112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source [3] |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| From kW to MW: powering the future of particle acceleration with solid-state technology | Leaflet | 2025-11-25 | |
| Thermal characteristics of GaN power transistors | Application note | 2024-09-01 | |
| Bias module for 50 V GaN demonstration boards | Application note | 2015-12-07 | |
| RF power solutions for ISM, broadcast, navigation and safety radio applications | Brochure | 2025-11-26 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 |
Recommended line-up
No documentation available.