C5H4850N55D
Request datasheetC5H4850N55D
Request datasheetPower GaN transistor
55 W GaN Doherty RF power transistor for base station applications at frequencies from 4800 MHz to 5000 MHz.
Features and benefits
- Compact 8 mm x 8 mm QFN package
- Optimized for Doherty application
- High efficiency Doherty configuration
- Designed for broadband operation
- Internally matched for ease of use and compact layout
- Excellent digital pre-distortion capability
Applications
- RF power amplifier for base stations and multi carrier applications in the 4800 MHz to 5000 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 4800 | 5000 | MHz | ||
| PL(5dB) | nominal output power at 5 dB gain compression | 55 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | f = 5000 MHz [0] [1] | 50 | V | ||
| Gp | power gain | f = 5000 MHz [0] [1] | 12.6 | dB | ||
| ηD | drain efficiency | f = 5000 MHz [0] [1] | 45.9 | % | ||
| PAR | peak-to-average ratio | f = 5000 MHz [0] [1] | 9.3 | dB | ||
| ACPR | adjacent channel power ratio | f = 5000 MHz [0] [1] | -32.5 | dBc | ||
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| C5H4850N55D | QFN-8x8 (QFN-8x8-20-1) |
qfn-8x8-20-1_po | TR7; 500-fold; 16mm; dry pack | Active | Standard Marking |
C5H4850N55DZ (9349 610 29515) |
| TR13; 2000-fold; 16mm; dry pack | Active | Standard Marking |
C5H4850N55DX (9349 610 29525) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1, 5, 9, 11,12, 17 | NC | no connection |
|
|
| 2 | RF_IN_carrier | RF input of carrier | ||
| 3, 7, 8, 18, 19 | NC | no connection [2] | ||
| 4 | RF_IN_peaking | RF input of peaking | ||
| 6 | VGS(peaking) | gate-source voltage of peaking | ||
| 10, 16 | VDS | drain-source voltage | ||
| 13, 14, 15 | RF_OUT | RF output | ||
| 20 | VGS(carrier) | gate-source voltage of carrier |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| C5H4850N55D | 9349 610 29515 | C5H4850N55DZ | RFMW | Buy | Request samples |
| C5H4850N55D | 9349 610 29525 | C5H4850N55DX | RFMW | Buy | Request samples |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Thermal characteristics of GaN power transistors | Application note | 2024-09-01 | |
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2026-04-17 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2026-04-20 |
No documentation available.