C5H3440N70D
Request datasheetC5H3440N70D
Request datasheetPower GaN transistor
70 W GaN packaged Doherty power transistor for base station applications at frequencies from 3400 MHz to 4000 MHz.
Features and benefits
- Excellent digital pre-distortion capability
- High efficiency
- Designed for broadband operation
- Optimized for Doherty application
- Internally matched for ease of use
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifier for base stations and multi carrier applications in the 3400 MHz to 4000 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 3400 | 4000 | MHz | ||
| PL(5dB) | nominal output power at 5 dB gain compression | 63 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| IDQ | quiescent drain current | f = 3600 to 4000 MHz [0] [1] | 50 | mA | ||
| VDS | drain-source voltage | f = 3600 to 4000 MHz [0] [1] | 48 | V | ||
| PL(AV) | average output power | f = 3600 to 4000 MHz [0] [1] | 39.8 | dBm | ||
| Gp | power gain | f = 3600 to 4000 MHz [0] [1] | 12.7 | dB | ||
| ηD | drain efficiency | f = 3600 to 4000 MHz [0] [1] | 51.6 | % | ||
| ACPR | adjacent channel power ratio | f = 3600 to 4000 MHz [0] [1] | -24.7 | dBc | ||
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| C5H3440N70D | QFN-8x8 (QFN-8x8-20-1) |
qfn-8x8-20-1_po | TR7; 500-fold; 16 mm; dry pack | Active | Standard Marking |
C5H3440N70DZ (9349 610 16515) |
| TR13; 2000-fold; 16 mm; dry pack | Active | Standard Marking |
C5H3440N70DX (9349 610 16525) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1, 5, 9, 11,12, 17 | NC | no connection |
|
|
| 2 | RF_IN_carrier | RF input of carrier | ||
| 3, 7, 8, 18, 19 | NC | no connection [2] | ||
| 4 | RF_IN_peaking | RF input of peaking | ||
| 6 | VGS(peaking) | gate-source voltage of peaking | ||
| 10, 16 | VDS | drain-source voltage | ||
| 13, 14, 15 | RF_OUT | RF output | ||
| 20 | VGS(carrier) | gate-source voltage of carrier |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| C5H3440N70D | 9349 610 16515 | C5H3440N70DZ | RFMW | Buy | Request samples |
| C5H3440N70D | 9349 610 16525 | C5H3440N70DX | RFMW | Buy | Request samples |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2025-02-03 | |
| Thermal characteristics of GaN power transistors | Application note | 2024-09-01 | |
| Packages for RF power transistors | Leaflet | 2026-04-17 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2026-04-20 |
Recommended line-up
No documentation available.