C4H2327N55P
Request datasheetC4H2327N55P
Request datasheetPower GaN transistor
50 W GaN packaged Doherty power transistor for base station applications at frequencies from 2300 MHz to 2690 MHz.
Features and benefits
- Excellent digital pre-distortion capability
- High efficiency
- Designed for broadband operation
- Lower output capacitance for improved performance in Doherty applications
- Internally matched for ease of use
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifier for base stations and multi carrier applications in the 2300 MHz to 2690 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2300 | 2700 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 50 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | f = 2496 MHz to 2690 MHz [0] [1] | 50 | V | ||
| Gp | power gain | f = 2496 MHz to 2690 MHz [0] [1] | 16.7 | dB | ||
| ηD | drain efficiency | f = 2496 MHz to 2690 MHz [0] [1] | 55 | % | ||
| PL(AV) | average output power | f = 2496 MHz to 2690 MHz [0] [1] | 7.8 | W | ||
| IDq | quiescent drain current | f = 2496 MHz to 2690 MHz [0] [1] | 30 | mA | ||
| ACPR | adjacent channel power ratio | f = 2496 MHz to 2690 MHz [0] [1] | -26 | dBc | ||
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| C4H2327N55P | DFN-7x6.5 (DFN-7x6.5-6-1) |
dfn-7x6.5-6-1_po | TR7; 1000-fold; 16 mm; dry pack | Active | Standard Marking |
C4H2327N55PZ (934960397515) |
| TR13; 3000-fold; 16 mm; dry pack | Active | Standard Marking |
C4H2327N55PX (934960397525) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | gate1 | gate 1 |
|
|
| 2 | n.c. | not connected | ||
| 3 | gate2 | gate 2 | ||
| 4 | drain2 | drain 2 | ||
| 5 | n.c. | not connected | ||
| 6 | drain1 | drain 1 |
Ordering & availability
| Type number | 12NC | OPN | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| C4H2327N55P | 934960397515 | C4H2327N55PZ | DigiKey | Buy | Request samples |
| RFMW | Buy | ||||
| C4H2327N55P | 934960397525 | C4H2327N55PX | DigiKey | Buy | Not available |
| RFMW | Buy |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2025-02-03 | |
| Thermal characteristics of GaN power transistors | Application note | 2024-09-01 | |
| Packages for RF power transistors | Leaflet | 2026-04-17 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2026-06-15 |
Recommended line-up
No documentation available.