BLF1822-10
Download datasheetUHF power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
Features and benefits
- Designed for broadband operation (HF to 2200 MHz)
- Easy power control
- Excellent ruggedness
- Excellent thermal stability
- High power gain
- No internal matching for broadband operation
Applications
- Broadcast drivers
- Multicarrier applications in frequency range the HF to 2200 MHz
- RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 30 | 2200 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 10 | W | |||
| Mode of operation: CW, class-AB (2-tone) | ||||||
| Gp | power gain | PL = 10 W; VDS = 26 V | 11 | 13.5 | dB | |
| ηD | drain efficiency | VDS = 26 V; f = 2200 MHz; IDq = 85 mA | 30 | % | ||
| PL(PEP) | peak envelope power | 10 | W | |||
Package / Packing
All type numbers in the table below are discontinued.
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLF1822-10 | SOT467 (SOT467C) |
sot467c_po | Bulk Pack | Withdrawn | Standard Marking |
BLF1822-10,112 (9340 565 82112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| UHF power LDMOS transistor | Data sheet | 2015-11-30 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
No documentation available.