BLC8G22LS-450AV
Download datasheetPower LDMOS transistor
450 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Features and benefits
- Excellent ruggedness
- High-efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2110 | 2170 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 450 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 85 W; VDS = 28 V | 13 | 14 | dB | |
| RLin | input return loss | PL(AV) = 85 W; VDS = 28 V; IDq = 1000 mA | -12 | -7 | dB | |
| ηD | drain efficiency | PL(AV) = 85 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 1000 mA | 37 | 41 | % | |
| ACPR | adjacent channel power ratio | PL(AV) = 85 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 1000 mA | -33 | -27 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLC8G22LS-450AV | ACP-1230 (SOT1258-1) |
sot1258-1_po | Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLC8G22LS-450AVY (9340 689 28518) |
| Tray, NonBakeable, Multiple in Drypack | Discontinued | Standard Marking |
BLC8G22LS-450AVZ (9340 689 28517) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D2P | drain2 (peak) |
|
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| 2 | D1M | drain1 (main) | ||
| 3 | G1M | gate1 (main) | ||
| 4 | G2P | gate2 (peak) | ||
| 5 | S | source | ||
| 6 | VDP | video decoupling (peak) | ||
| 7 | VDM | video decoupling (main) |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2017-11-24 | |
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC8G22LS-450AV (Data sheet) | Design support | 2015-06-01 | |
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| BLC8G22LS-450AV Model for ADS 2016 (Keysight Advanced Design System) | Simulation model | 2017-03-27 |