BLC10G27XS-551AVT
Download datasheetThis product is not recommended for design-in.
Power LDMOS transistor
550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2620 MHz to 2690 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifiers for base stations and multi carrier applications in the 2620 MHz to 2690 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2620 | 2690 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 550 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | 2620 to 2690 MHz [0] | 32 | V | ||
| Gp | power gain | 2620 to 2690 MHz [0] | 13.5 | dB | ||
| ηD | drain efficiency | 2620 to 2690 MHz [0] | 46 | % | ||
| PL(AV) | average output power | 2620 to 2690 MHz [0] | 91 | W | ||
| ACPR | adjacent channel power ratio | 2620 to 2690 MHz [0] | -31.3 [1] | dBc | ||
Package / Packing
All type numbers in the table below are not recommended for design-in.
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLC10G27XS-551AVT | ACP-1230 (SOT1258-4) |
sot1258-4_po | Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLC10G27XS-551AVTY (9349 602 38518) |
| Tray, NonBakeable, Multiple in Drypack | Active | Standard Marking |
BLC10G27XS-551AVTZ (9349 602 38517) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D2P | drain2 (peak) |
|
|
| 2 | D1M | drain1 (main) | ||
| 3 | G1M | gate1 (main) | ||
| 4 | G2P | gate2 (peak) | ||
| 5 | S | source [2] | ||
| 6 | VDP | video decoupling (peak) | ||
| 7 | VDM | video decoupling (main) |
Ordering & availability
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Power LDMOS transistor | Data sheet | 2019-09-20 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC10G27XS-551AVT (Data sheet) | Design support | 2019-10-13 |