B10H1822N60D
Request datasheetB10H1822N60D
Request datasheetLDMOS 2-stage integrated Doherty MMIC
The B10H1822N60D is a 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art 50 V LDMOS technology. Featuring 50 Ω input / 50 Ω output impedances, this device is perfectly suited as general purpose driver in the frequency range 1800 MHz to 2200 MHz. Available in a 7 mm x 7 mm LGA outline.
Features and benefits
- Fully integrated multi-stage Doherty 50 Ω input / 50 Ω output
- High linearity
- Independent control of carrier and peaking bias
- Integrated ESD protection
- High power gain
- For RoHS compliance see the product details on the Ampleon website
Applications
- 4G/5G Macrocell base station driver
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1800 | 2200 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 53.7 | W | |||
| Test signal: 1-c LTE 20 MHz | ||||||
| VDS | drain-source voltage | f = 1842.5 MHz [0] [1] | 48 | V | ||
| PL(AV) | average output power | f = 1842.5 MHz [0] [1] | 1.99 | W | ||
| Gp | power gain | f = 1842.5 MHz [0] [1] | 29.6 | dB | ||
| ηD | drain efficiency | f = 1842.5 MHz [0] [1] | 21.6 | % | ||
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| B10H1822N60D | LGA-7x7 (LGA-7x7-20-3) |
TR13, 3000-fold, 16mm, dry-pack | Active | Standard Marking |
B10H1822N60DX (9349 610 57525) |
|
| TR7, 500-fold, 16mm, dry-pack | Active | Standard Marking |
B10H1822N60DZ (9349 610 57515) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | VGS_P | drain-source voltage of driver stage |
|
|
| 2 | NC | not connected | ||
| 3 | GND | ground | ||
| 4 | RFin | RF input | ||
| 5 | GND | ground | ||
| 6 | NC | not connected [2] | ||
| 7 | NC | not connected [2] | ||
| 8 | GND | ground | ||
| 9 | GND | ground | ||
| 10 | GND | ground | ||
| 11 | GND | ground | ||
| 12 | RFout | RF output | ||
| 13 | GND | ground | ||
| 14 | NC | not connected | ||
| 15 | VDS2 | drain-source voltage of final stage [3] | ||
| 16 | VDS2 | drain-source voltage of final stage [3] | ||
| 17 | NC | not connected | ||
| 18 |
VGS(peak)
|
gate-source voltage of peaking
|
| ||
| 19 | VGS(carr) | gate-source voltage of carrier | ||
| 20 | VGS(driver) | gate-source voltage of stand-alone class AB driver [4] |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| B10H1822N60D | 9349 610 57525 | B10H1822N60DX | Request samples | ||
| B10H1822N60D | 9349 610 57515 | B10H1822N60DZ | Request samples |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-08-08 |
No documentation available.