LDMOS S-band radar power transistor

200 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Designed for S-band operation
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • For RoHS compliance see the product details on the Ampleon website


  • S-band radar applications in the frequency range 2.7 GHz to 3.1 GHz


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RF Power Lifetime Calculator


LDMOS S-band radar power transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2700 3100 MHz
PL(1dB) nominal output power at 1 dB gain compression 200 W
Test signal: Pulsed RF
VDS drain-source voltage 2.7 to 3.1 GHz [0] 32 V
Gp power gain 2.7 to 3.1 GHz [0] 14 dB
ηD drain efficiency 2.7 to 3.1 GHz [0] 45 %
PL load power 2.7 to 3.1 GHz [0] 200 W

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLSC9G2731XS-200 SOT1270-1
sot1270-1_po.pdf Tray, NonBakeable, Multiple in Drypack Active Standard Marking BLSC9G2731XS-200Z
(9349 601 27517)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLSC9G2731XS-200 BLSC9G2731XS-200Z BLSC9G2731XS-200 Always Pb-free 3 3
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLSC9G2731XS-200 9349 601 27517 BLSC9G2731XS-200Z RFMW Buy Request samples
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Title Type Date
LDMOS S-band radar power transistor Data sheet 2019-02-22

Design support

Title Type Date
PCB Design BLSC9G2731XS-200 (Data sheet) Design support 2019-02-22
BLSC9G2731XS-200 ADS-2016 Simulation model 2019-02-22