LDMOS 3-stage integrated Doherty MMIC

The B10G3741N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3700 MHz to 4100 MHz. Available in PQFN outline.

Features and benefits

  • Integrated input splitter
  • Integrated output combiner
  • 30 Ω output impedance thanks to integrated pre-match
  • Very high efficiency thanks to asymmetry
  • Designed for wideband operation (frequency 3700 MHz to 4100 MHz)
  • Independent control of carrier and peaking bias
  • Integrated ESD protection
  • Source impedance 50 Ω; high power gain
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power MMIC for multi-carrier and multi-standard 5G, W-CDMA and LTE base stations in the 3700 MHz to 4100 MHz frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 3700 4100 MHz
PL(3dB) nominal output power at 3 dB gain compression 55 W
Test signal: Pulsed CW
VDS drain-source voltage [0] 28 V
Gp power gain [0] 32.7 34.7 36.7 dB
ηD drain efficiency PL = 7.94 W (39 dBm) [0] 35 41 %
ηD drain efficiency PL = PL(3dB) [0] 38 42 %
RLin input return loss [0] -10 dB
PL(M) peak output power [0] 46.8 47.6 dBm

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
B10G3741N55D PQFN20
(SOT1462-1)
sot1462-1_po.pdf TR13; 500-fold; 16 mm; dry pack Active Standard Marking B10G3741N55DZ
(9349 604 16515)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 VDS2 drain-source voltage of final stages
2 d.n.c./GND do not connect or GND
3 n.c. not connected
4 VGS(carr) gate-source voltage of carrier
5 VGS(peak) gate-source voltage of peaking
6 VDS1 drain-source voltage of driver stages
7 GND RF ground
8 RF_IN RF input
9 GND RF ground
10 VDS1 drain-source voltage of driver stages
11 VGS(peak) gate-source voltage of peaking
12 VGS(carr) gate-source voltage of carrier
13 n.c. not connected
14 d.n.c./GND do not connect or GND
15 VDS2 drain-source voltage of final stages
16 RF_OUT RF output
17 RF_OUT RF output
18 RF_OUT RF output
19 RF_OUT RF output
20 RF_OUT RF output
flange GND RF ground

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
B10G3741N55D 9349 604 16515 B10G3741N55DZ DigiKey Buy Request samples

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
B10G3741N55D B10G3741N55DZ B10G3741N55D Always Pb-free 3 3
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
B10G3741N55D 9349 604 16515 B10G3741N55DZ DigiKey Buy Request samples

Design support

Title Type Date
Printed-Circuit Board (PCB) B10G3741N55D (Data sheet) Design support 2021-05-27