Internally pre-matched GaN HEMT

The CLF09H4LS800P is a 800 W internally pre-matched RF GaN HEMT power transistor that is usable at frequencies from 902 MHz to 928 MHz.

Features and benefits

  • 800 W internally pre-matched RF Power GaN HEMT, frequencies from 902 MHz to 928 MHz
  • High efficiency
  • High input impedance
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial applications in the 915 MHz ISM band
  • Professional applications in the 915 MHz ISM band

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 902 928 MHz
PL(3dB) nominal output power at 3 dB gain compression 800 W
Test signal: CW
Gp power gain 928 MHz [0] 17.4 dB
PL(AV) average output power 928 MHz [0] 805 [2] W
ηD drain efficiency 928 MHz [0] 81.8 [2] %
Test signal: CW pulsed
Gp power gain 928 MHz [0] [1] 18 dB
PL(AV) average output power 928 MHz [0] [1] 820 [2] W
ηD drain efficiency 928 MHz [0] [1] 83.0 [2] %

Package / Packing

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
CLF09H4LS800P ACC-780
(SOT1214B)
sot1214b_po Tray; 20-fold; non-dry pack Active Standard Marking CLF09H4LS800PU
(934961089112)
TR13; 100-fold; 44mm; non-dry pack Active Standard Marking CLF09H4LS800PJ
(934961089118)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source [3]

Recommended line-up

No documentation available.